; configuration file for scmos with lamba = 1.0 (2um process)
;
capm2a .00000 ; 2nd metal capacitance -- area, pf/sq-micron
capm2p .00020 ; 2nd metal capacitance -- perimeter, pf/micron
capma .00003 ; 1st metal capacitance -- area, pf/sq-micron
capmp .00020 ; 1st metal capacitance -- perimeter, pf/micron
cappa .00007 ; poly capacitance -- area, pf/sq-micron
cappp .00020 ; poly capacitance -- perimeter, pf/micron
capda .00030 ; n-diffusion capacitance -- area, pf/sq-micron
capdp .00030 ; n-diffusion capacitance -- perimeter, pf/micron
cappda .00030 ; p-diffusion capacitance -- area, pf/sq-micron
cappdp .00030 ; p-diffusion capacitance -- perimeter, pf/micron
capga .000816 ; gate capacitance -- area, pf/sq-micron
diffext 0 ; diffusion extension for each transistor
lambda 1.0 ; microns/lambda (conversion from .sim file units
; to units used in cap parameters)
lowthresh 0.4 ; logic low threshold as a normalized voltage
highthresh 0.6 ; logic high threshold as a normalized voltage
cntpullup 0 ; irrelevant, cmos technology; no depletion transistors
; <>0 means that the capacitor formed by gate of
; pullup should be included in capacitance of output
; node
diffperim 0 ; don't include diffusion perimeters for sidewall cap.
; <>0 means do not include diffusion perimeters
; that border on transistor gates when figuring
; sidewall capacitance (*)
subparea 0 ; poly over transistor won't count as part pf bulk-poly cap.
; <>0 means that poly over transistor region will not
; be counted as part of the poly-bulk capacitor (*)
diffext 0 ; diffusion extension for each transistor, i.e., each
; transistor is assumed to have a rectangular source
; and drain diffusion extending diffext units wide and
; transistor-width units high. The effect of the
; diffusion extension is to add some capacitance to
; the source and drain node of each transistor --
; useful when processing the output of NET to improve
; the capacitive loading approximations without adding
; explicit load capacitors. diffext is specified in
; lambda (it will be converted using the lambda factor
; above).
;resistance channel context width length resist
; this command specifies the equivalent resistance for a transistor
; of type channel with the specified width and length. Transistors
; matching this entry will have the specified resistance; linear
; interpolation is done if the width and/or length is not matched
; exactly.
; channel is one of "enh", "dep", "intrinsic", "low-power",
; "pullup", or "p-chan"
; context is one of "static", "dynamic-high", "dynamic-low", or "power"
; width is given in lambda
; length is given in lambda
; resist is given in ohms
; n-channel resistance
;Keyword Type Context Width Length Resistance
;--------- --------- ------------ ----- ------ ----------
resistance n-channel dynamic-high 10.0 2.0 3847.0
resistance n-channel dynamic-low 10.0 2.0 1856.0
resistance n-channel static 10.0 2.0 2472.0
; p-channel resistance
resistance p-channel dynamic-high 20.0 2.0 2020.0
resistance p-channel dynamic-low 20.0 2.0 3969.0
resistance p-channel static 20.0 2.0 2011.0