| 0. TABLE OF CONTENTS | 1. INTRODUCTION | 2. CIRCUIT DESCRIPTION |
|---|---|---|
| 3. CIRCUIT ELEMENTS AND MODELS | 4. ANALYSES AND OUTPUT CONTROL | 5. INTERACTIVE INTERPRETER |
| 6. BIBLIOGRAPHY | APPENDIX A | APPENDIX B |
Output parameters are those additional parameters which are available for many types of instances for the output of operating point and debugging information. These parameters are specified as "@device[keyword]" and are available for the most recent point computed or, if specified in a ".save" statement, for an entire simulation as a normal output vector. Thus, to monitor the gate-to-source capacitance of a MOSFET, a command
save @m1[cgs]
given before a transient simulation causes the specified
capacitance value to be saved at each timepoint, and a subsequent command such as
plot @m1[cgs]
produces the desired plot. (Note that the show command does
not use this format).
Some variables are listed as both input and output, and their output simply returns the previously input value, or the default value after the simulation has been run. Some parameter are input only because the output system can not handle variables of the given type yet, or the need for them as output variables has not been apparent. Many such input variables are available as output variables in a different format, such as the initial condition vectors that can be retrieved as individual initial condition values. Finally, internally derived values are output only and are provided for debugging and operating point output purposes.
Please note that these tables do not provide the detailed information available about the parameters provided in the section on each device and model, but are provided as a quick reference guide.
------------------------------------------------------------ | URC - instance parameters (input-output) | |-----------------------------------------------------------+ | l Length of transmission line | | n Number of lumps | ------------------------------------------------------------ ------------------------------------------------------------ | URC - instance parameters (output-only) | |-----------------------------------------------------------+ | pos_node Positive node of URC | | neg_node Negative node of URC | | gnd Ground node of URC | ------------------------------------------------------------ ------------------------------------------------------------ | URC - model parameters (input-only) | |-----------------------------------------------------------+ | urc Uniform R.C. line model | ------------------------------------------------------------ ------------------------------------------------------------ | URC - model parameters (input-output) | |-----------------------------------------------------------+ | k Propagation constant | | fmax Maximum frequency of interest | | rperl Resistance per unit length | | cperl Capacitance per unit length | | isperl Saturation current per length | | rsperl Diode resistance per length | ------------------------------------------------------------
------------------------------------------------------------ | ASRC - instance parameters (input-only) | |-----------------------------------------------------------+ | i Current source | | v Voltage source | ------------------------------------------------------------ ------------------------------------------------------------ | ASRC - instance parameters (output-only) | |-----------------------------------------------------------+ | i Current through source | | v Voltage across source | | pos_node Positive Node | | neg_node Negative Node | ------------------------------------------------------------
------------------------------------------------------------ | BJT - instance parameters (input-only) | |-----------------------------------------------------------+ | ic Initial condition vector | ------------------------------------------------------------ ------------------------------------------------------------ | BJT - instance parameters (input-output) | |-----------------------------------------------------------+ | off Device initially off | | icvbe Initial B-E voltage | | icvce Initial C-E voltage | | area Area factor | | temp instance temperature | ------------------------------------------------------------ ------------------------------------------------------------ | BJT - instance parameters (output-only) | |-----------------------------------------------------------+ | colnode Number of collector node | | basenode Number of base node | | emitnode Number of emitter node | | substnode Number of substrate node | ------------------------------------------------------------ | colprimenode Internal collector node | | baseprimenode Internal base node | | emitprimenode Internal emitter node | | ic Current at collector node | |-----------------------------------------------------------+ ib Current at base node | ie Emitter current | | is Substrate current | | vbe B-E voltage | ------------------------------------------------------------ | vbc B-C voltage | | gm Small signal transconductance | | gpi Small signal input conductance - pi | | gmu Small signal conductance - mu | |-----------------------------------------------------------+ | gx Conductance from base to internal base | | go Small signal output conductance | | geqcb d(Ibe)/d(Vbc) | | gccs Internal C-S cap. equiv. cond. | ------------------------------------------------------------ | geqbx Internal C-B-base cap. equiv. cond. | | cpi Internal base to emitter capactance | | cmu Internal base to collector capactiance | | cbx Base to collector capacitance | |-----------------------------------------------------------+ | ccs Collector to substrate capacitance | | cqbe Cap. due to charge storage in B-E jct. | | cqbc Cap. due to charge storage in B-C jct. | | cqcs Cap. due to charge storage in C-S jct. | | cqbx Cap. due to charge storage in B-X jct. | | continued | ------------------------------------------------------------ ------------------------------------------------------------ | BJT - instance output-only parameters - continued |-----------------------------------------------------------+ | cexbc Total Capacitance in B-X junction | | qbe Charge storage B-E junction | | qbc Charge storage B-C junction | | qcs Charge storage C-S junction | | qbx Charge storage B-X junction | | p Power dissipation | ------------------------------------------------------------ ------------------------------------------------------------ | BJT - model parameters (input-output) | |-----------------------------------------------------------+ | npn NPN type device | | pnp PNP type device | | is Saturation Current | | bf Ideal forward beta | ------------------------------------------------------------ | nf Forward emission coefficient | | vaf Forward Early voltage | | va (null) | | ikf Forward beta roll-off corner current | |-----------------------------------------------------------+ | ik (null) | | ise B-E leakage saturation current | | ne B-E leakage emission coefficient | | br Ideal reverse beta | ------------------------------------------------------------ | nr Reverse emission coefficient | | var Reverse Early voltage | | vb (null) | | ikr reverse beta roll-off corner current | |-----------------------------------------------------------+ | isc B-C leakage saturation current | | nc B-C leakage emission coefficient | | rb Zero bias base resistance | | irb Current for base resistance=(rb+rbm)/2 | ------------------------------------------------------------ | rbm Minimum base resistance | | re Emitter resistance | | rc Collector resistance | | cje Zero bias B-E depletion capacitance | |-----------------------------------------------------------+ | vje B-E built in potential | | pe (null) | | mje B-E junction grading coefficient | | me (null) | ------------------------------------------------------------ | tf Ideal forward transit time | | xtf Coefficient for bias dependence of TF | | vtf Voltage giving VBC dependence of TF | | itf High current dependence of TF | |-----------------------------------------------------------+ | ptf Excess phase | | cjc Zero bias B-C depletion capacitance | | vjc B-C built in potential | | continued | ------------------------------------------------------------ ------------------------------------------------------------ | BJT - model input-output parameters - continued |-----------------------------------------------------------+ | pc (null) | | mjc B-C junction grading coefficient | | mc (null) | | xcjc Fraction of B-C cap to internal base | ------------------------------------------------------------ | tr Ideal reverse transit time | | cjs Zero bias C-S capacitance | | ccs Zero bias C-S capacitance | | vjs Substrate junction built in potential | |-----------------------------------------------------------+ | ps (null) | | mjs Substrate junction grading coefficient | | ms (null) | | xtb Forward and reverse beta temp. exp. | ------------------------------------------------------------ | eg Energy gap for IS temp. dependency | | xti Temp. exponent for IS | | fc Forward bias junction fit parameter | | tnom Parameter measurement temperature | | kf Flicker Noise Coefficient | | af Flicker Noise Exponent | ------------------------------------------------------------ ------------------------------------------------------------ | BJT - model parameters (output-only) | |-----------------------------------------------------------+ | type NPN or PNP | | invearlyvoltf Inverse early voltage:forward | | invearlyvoltr Inverse early voltage:reverse | | invrollofff Inverse roll off - forward | ------------------------------------------------------------ | invrolloffr Inverse roll off - reverse | | collectorconduct Collector conductance | | emitterconduct Emitter conductance | | transtimevbcfact Transit time VBC factor | | excessphasefactor Excess phase fact. | ------------------------------------------------------------B.4
------------------------------------------------------------ | BSIM1 - instance parameters (input-only) | |-----------------------------------------------------------+ | ic Vector of DS,GS,BS initial voltages | ------------------------------------------------------------ ------------------------------------------------------------ | BSIM1 - instance parameters (input-output) | |-----------------------------------------------------------+ | l Length | | w Width | | ad Drain area | | as Source area | ------------------------------------------------------------ | pd Drain perimeter | | ps Source perimeter | | nrd Number of squares in drain | | nrs Number of squares in source | |-----------------------------------------------------------+ | off Device is initially off | | vds Initial D-S voltage | | vgs Initial G-S voltage | | vbs Initial B-S voltage | ------------------------------------------------------------ ------------------------------------------------------------ | BSIM1 - model parameters (input-only) | |-----------------------------------------------------------+ | nmos Flag to indicate NMOS | | pmos Flag to indicate PMOS | ------------------------------------------------------------ ------------------------------------------------------------ | BSIM1 - model parameters (input-output) | |-----------------------------------------------------------+ | vfb Flat band voltage | lvfb Length dependence of vfb | wvfb Width dependence of vfb | | phi Strong inversion surface potential | ------------------------------------------------------------ | lphi Length dependence of phi | | wphi Width dependence of phi | | k1 Bulk effect coefficient 1 | | lk1 Length dependence of k1 | |-----------------------------------------------------------+ | wk1 Width dependence of k1 | | k2 Bulk effect coefficient 2 | | lk2 Length dependence of k2 | | wk2 Width dependence of k2 | ------------------------------------------------------------ | eta VDS dependence of threshold voltage | | leta Length dependence of eta | | weta Width dependence of eta | | x2e VBS dependence of eta | | lx2e Length dependence of x2e | | continued | ------------------------------------------------------------ --------------------------------------------------------------------- | BSIM1 - model input-output parameters - continued| |--------------------------------------------------------------------+ |wx2e Width dependence of x2e | |x3e VDS dependence of eta | |lx3e Length dependence of x3e | |wx3e Width dependence of x3e | --------------------------------------------------------------------- |dl Channel length reduction in um | |dw Channel width reduction in um | |muz Zero field mobility at VDS=0 VGS=VTH | |x2mz VBS dependence of muz | |--------------------------------------------------------------------+ |lx2mz Length dependence of x2mz | |wx2mz Width dependence of x2mz | mus Mobility at VDS=VDD VGS=VTH, channel length modulation |lmus Length dependence of mus | --------------------------------------------------------------------- |wmus Width dependence of mus | |x2ms VBS dependence of mus | |lx2ms Length dependence of x2ms | |wx2ms Width dependence of x2ms | |--------------------------------------------------------------------+ |x3ms VDS dependence of mus | |lx3ms Length dependence of x3ms | |wx3ms Width dependence of x3ms | |u0 VGS dependence of mobility | --------------------------------------------------------------------- |lu0 Length dependence of u0 | |wu0 Width dependence of u0 | |x2u0 VBS dependence of u0 | |lx2u0 Length dependence of x2u0 | |--------------------------------------------------------------------+ |wx2u0 Width dependence of x2u0 | |u1 VDS depence of mobility, velocity saturation | |lu1 Length dependence of u1 | |wu1 Width dependence of u1 | --------------------------------------------------------------------- |x2u1 VBS depence of u1 | |lx2u1 Length depence of x2u1 | |wx2u1 Width depence of x2u1 | |x3u1 VDS depence of u1 | |--------------------------------------------------------------------+ |lx3u1 Length dependence of x3u1 | |wx3u1 Width depence of x3u1 | |n0 Subthreshold slope | |ln0 Length dependence of n0 | --------------------------------------------------------------------- |wn0 Width dependence of n0 | |nb VBS dependence of subthreshold slope | |lnb Length dependence of nb | |wnb Width dependence of nb | |--------------------------------------------------------------------+ |nd VDS dependence of subthreshold slope | |lnd Length dependence of nd | |wnd Width dependence of nd | |tox Gate oxide thickness in um | |temp Temperature in degree Celcius | |vdd Supply voltage to specify mus | |cgso Gate source overlap capacitance per unit channel width(m) | --------------------------------------------------------------------------- |cgdo Gate drain overlap capacitance per unit channel width(m) | |cgbo Gate bulk overlap capacitance per unit channel length(m) | |xpart Flag for channel charge partitioning | |rsh Source drain diffusion sheet resistance in ohm per square | |--------------------------------------------------------------------------+ |js Source drain junction saturation current per unit area | |pb Source drain junction built in potential | mj Source drain bottom junction capacitance grading coefficient |pbsw Source drain side junction capacitance built in potential | --------------------------------------------------------------------------- |mjsw Source drain side junction capacitance grading coefficient | |cj Source drain bottom junction capacitance per unit area | |cjsw Source drain side junction capacitance per unit area | |wdf Default width of source drain diffusion in um | |dell Length reduction of source drain diffusion | ---------------------------------------------------------------------------
------------------------------------------------------------ | BSIM2 - instance parameters (input-only) | |-----------------------------------------------------------+ | ic Vector of DS,GS,BS initial voltages | ------------------------------------------------------------ ------------------------------------------------------------ | BSIM2 - instance parameters (input-output) | |-----------------------------------------------------------+ | l Length | | w Width | | ad Drain area | | as Source area | ------------------------------------------------------------ | pd Drain perimeter | | ps Source perimeter | | nrd Number of squares in drain | | nrs Number of squares in source | |-----------------------------------------------------------+ | off Device is initially off | | vds Initial D-S voltage | | vgs Initial G-S voltage | | vbs Initial B-S voltage | ------------------------------------------------------------ ------------------------------------------------------------ | BSIM2 - model parameters (input-only) | |-----------------------------------------------------------+ | nmos Flag to indicate NMOS | | pmos Flag to indicate PMOS | ------------------------------------------------------------ ------------------------------------------------------------ | BSIM2 - model parameters (input-output) | |-----------------------------------------------------------+ |vfb Flat band voltage | |lvfb Length dependence of vfb | |wvfb Width dependence of vfb | |phi Strong inversion surface potential | ------------------------------------------------------------ |lphi Length dependence of phi | |wphi Width dependence of phi | |k1 Bulk effect coefficient 1 | |lk1 Length dependence of k1 | |-----------------------------------------------------------+ |wk1 Width dependence of k1 | |k2 Bulk effect coefficient 2 | |lk2 Length dependence of k2 | |wk2 Width dependence of k2 | ------------------------------------------------------------ |eta0 VDS dependence of threshold voltage at VDD=0 |leta0 Length dependence of eta0 | |weta0 Width dependence of eta0 | |etab VBS dependence of eta | |-----------------------------------------------------------+ |letab Length dependence of etab | |wetab Width dependence of etab | |dl Channel length reduction in um | |dw Channel width reduction in um | ------------------------------------------------------------ |mu0 Low-field mobility, at VDS=0 VGS=VTH | |mu0b VBS dependence of low-field mobility | |lmu0b Length dependence of mu0b | |wmu0b Width dependence of mu0b | |-----------------------------------------------------------+ |mus0 Mobility at VDS=VDD VGS=VTH | |lmus0 Length dependence of mus0 | |wmus0 Width dependence of mus | |musb VBS dependence of mus | ------------------------------------------------------------ |lmusb Length dependence of musb | |wmusb Width dependence of musb | |mu20 VDS dependence of mu in tanh term | |lmu20 Length dependence of mu20 | |-----------------------------------------------------------+ |wmu20 Width dependence of mu20 | |mu2b VBS dependence of mu2 | |lmu2b Length dependence of mu2b | |wmu2b Width dependence of mu2b | ------------------------------------------------------------ |mu2g VGS dependence of mu2 | | lmu2g Length dependence of mu2g | | wmu2g Width dependence of mu2g | | mu30 VDS dependence of mu in linear term | | lmu30 Length dependence of mu30 | ------------------------------------------------------------ | wmu30 Width dependence of mu30 | | mu3b VBS dependence of mu3 | | lmu3b Length dependence of mu3b | | wmu3b Width dependence of mu3b | |-----------------------------------------------------------+ | mu3g VGS dependence of mu3 | | lmu3g Length dependence of mu3g | | wmu3g Width dependence of mu3g | | mu40 VDS dependence of mu in linear term | ------------------------------------------------------------ | lmu40 Length dependence of mu40 | | wmu40 Width dependence of mu40 | | mu4b VBS dependence of mu4 | | lmu4b Length dependence of mu4b | |-----------------------------------------------------------+ | wmu4b Width dependence of mu4b | | mu4g VGS dependence of mu4 | | lmu4g Length dependence of mu4g | | wmu4g Width dependence of mu4g | ------------------------------------------------------------ | ua0 Linear VGS dependence of mobility | | lua0 Length dependence of ua0 | | wua0 Width dependence of ua0 | | uab VBS dependence of ua | |-----------------------------------------------------------+ | luab Length dependence of uab | | wuab Width dependence of uab | | ub0 Quadratic VGS dependence of mobility | | lub0 Length dependence of ub0 | ------------------------------------------------------------ | wub0 Width dependence of ub0 | | ubb VBS dependence of ub | | lubb Length dependence of ubb | | wubb Width dependence of ubb | |-----------------------------------------------------------+ | u10 VDS depence of mobility | | lu10 Length dependence of u10 | wu10 Width dependence of u10 | u1b VBS depence of u1 | ------------------------------------------------------------ | lu1b Length depence of u1b | | wu1b Width depence of u1b | | u1d VDS depence of u1 | | lu1d Length depence of u1d | |-----------------------------------------------------------+ | wu1d Width depence of u1d | | n0 Subthreshold slope at VDS=0 VBS=0 | | ln0 Length dependence of n0 | |wn0 Width dependence of n0 | |nb VBS dependence of n | |lnb Length dependence of nb | |wnb Width dependence of nb | ------------------------------------------------------------------------ |nd VDS dependence of n | |lnd Length dependence of nd | |wnd Width dependence of nd | |vof0 Threshold voltage offset AT VDS=0 VBS=0 | |-----------------------------------------------------------------------+ |lvof0 Length dependence of vof0 | |wvof0 Width dependence of vof0 | |vofb VBS dependence of vof | |lvofb Length dependence of vofb | ------------------------------------------------------------------------ |wvofb Width dependence of vofb | |vofd VDS dependence of vof | |lvofd Length dependence of vofd | |wvofd Width dependence of vofd | |-----------------------------------------------------------------------+ |ai0 Pre-factor of hot-electron effect. | |lai0 Length dependence of ai0 | |wai0 Width dependence of ai0 | |aib VBS dependence of ai | ------------------------------------------------------------------------ |laib Length dependence of aib | |waib Width dependence of aib | |bi0 Exponential factor of hot-electron effect. | |lbi0 Length dependence of bi0 | |-----------------------------------------------------------------------+ |wbi0 Width dependence of bi0 | |bib VBS dependence of bi | |lbib Length dependence of bib | |wbib Width dependence of bib | ------------------------------------------------------------------------ |vghigh Upper bound of the cubic spline function. | |lvghigh Length dependence of vghigh | |wvghigh Width dependence of vghigh | |vglow Lower bound of the cubic spline function. | |-----------------------------------------------------------------------+ |lvglow Length dependence of vglow | |wvglow Width dependence of vglow | |tox Gate oxide thickness in um | |temp Temperature in degree Celcius | ------------------------------------------------------------------------ |vdd Maximum Vds | |vgg Maximum Vgs | |vbb Maximum Vbs | |cgso Gate source overlap capacitance per unit channel width(m) |-----------------------------------------------------------------------+ |cgdo Gate drain overlap capacitance per unit channel width(m)| |cgbo Gate bulk overlap capacitance per unit channel length(m)| |xpart Flag for channel charge partitioning | |rsh Source drain diffusion sheet resistance in ohm per square | |js Source drain junction saturation current per unit area | |pb Source drain junction built in potential | mj Source drain bottom junction capacitance grading coefficient | | --------------------------------------------------------------------------- |pbsw Source drain side junction capacitance built in potential | |mjsw Source drain side junction capacitance grading coefficient | |cj Source drain bottom junction capacitance per unit area | |cjsw Source drain side junction capacitance per unit area | |wdf Default width of source drain diffusion in um | |dell Length reduction of source drain diffusion | ---------------------------------------------------------------------------
------------------------------------------------------------ | Capacitor - instance parameters (input-output) | |-----------------------------------------------------------+ | capacitance Device capacitance | | ic Initial capacitor voltage | | w Device width | | l Device length | ------------------------------------------------------------ ------------------------------------------------------------ | Capacitor - instance parameters (output-only) | |-----------------------------------------------------------+ | i Device current | | p Instantaneous device power | ------------------------------------------------------------ ------------------------------------------------------------ | Capacitor - model parameters (input-only) | |-----------------------------------------------------------+ | c Capacitor model | ------------------------------------------------------------ ------------------------------------------------------------ | Capacitor - model parameters (input-output) | |-----------------------------------------------------------+ | cj Bottom Capacitance per area | | cjsw Sidewall capacitance per meter | | defw Default width | | narrow width correction factor | ------------------------------------------------------------
------------------------------------------------------------ | CCCS - instance parameters (input-output) | |-----------------------------------------------------------+ | gain Gain of source | | control Name of controlling source | ------------------------------------------------------------ ------------------------------------------------------------ | CCCS - instance parameters (output-only) | |-----------------------------------------------------------+ | neg_node Negative node of source | | pos_node Positive node of source | | i CCCS output current | | v CCCS voltage at output | | p CCCS power | ------------------------------------------------------------
------------------------------------------------------------ | CCVS - instance parameters (input-output) | |-----------------------------------------------------------+ | gain Transresistance (gain) | | control Controlling voltage source | ------------------------------------------------------------ ------------------------------------------------------------ | CCVS - instance parameters (output-only) | |-----------------------------------------------------------+ | pos_node Positive node of source | | neg_node Negative node of source | | i CCVS output current | | v CCVS output voltage | | p CCVS power | ------------------------------------------------------------B.9
------------------------------------------------------------ | CSwitch - instance parameters (input-only) | |-----------------------------------------------------------+ | on Initially closed | | off Initially open | ------------------------------------------------------------ ------------------------------------------------------------ | CSwitch - instance parameters (input-output) | |-----------------------------------------------------------+ | control Name of controlling source | ------------------------------------------------------------ ------------------------------------------------------------ | CSwitch - instance parameters (output-only) | |-----------------------------------------------------------+ | pos_node Positive node of switch | | neg_node Negative node of switch | | i Switch current | | p Instantaneous power | ------------------------------------------------------------ ------------------------------------------------------------ | CSwitch - model parameters (input-output) | |-----------------------------------------------------------+ | csw Current controlled switch model | | it Threshold current | | ih Hysterisis current | | ron Closed resistance | | roff Open resistance | ------------------------------------------------------------ ------------------------------------------------------------ | CSwitch - model parameters (output-only) | |-----------------------------------------------------------+ | gon Closed conductance | | goff Open conductance | ------------------------------------------------------------
------------------------------------------------------------ | Diode - instance parameters (input-output) | |-----------------------------------------------------------+ | off Initially off | | temp Instance temperature | | ic Initial device voltage | | area Area factor | ------------------------------------------------------------ ------------------------------------------------------------ | Diode - instance parameters (output-only) | |-----------------------------------------------------------+ | vd Diode voltage | | id Diode current | | c Diode current | | gd Diode conductance | ------------------------------------------------------------ | cd Diode capacitance | | charge Diode capacitor charge | | capcur Diode capacitor current | | p Diode power | ------------------------------------------------------------ ------------------------------------------------------------ | Diode - model parameters (input-only) | |-----------------------------------------------------------+ | d Diode model | ------------------------------------------------------------ ------------------------------------------------------------ | Diode - model parameters (input-output) | |-----------------------------------------------------------+ | is Saturation current | | tnom Parameter measurement temperature | | rs Ohmic resistance | | n Emission Coefficient | ------------------------------------------------------------ | tt Transit Time | | cjo Junction capacitance | | cj0 (null) | | vj Junction potential | |-----------------------------------------------------------+ | m Grading coefficient | | eg Activation energy | | xti Saturation current temperature exp. | | kf flicker noise coefficient | ------------------------------------------------------------ | af flicker noise exponent | | fc Forward bias junction fit parameter | | bv Reverse breakdown voltage | | ibv Current at reverse breakdown voltage | ------------------------------------------------------------ ------------------------------------------------------------ | Diode - model parameters (output-only) | |-----------------------------------------------------------+ | cond Ohmic conductance | ------------------------------------------------------------B.11
------------------------------------------------------------ | Inductor - instance parameters (input-output) | |-----------------------------------------------------------+ | inductance Inductance of inductor | | ic Initial current through inductor | ------------------------------------------------------------ ------------------------------------------------------------- | Inductor - instance parameters (output-only) | |------------------------------------------------------------+ |flux Flux through inductor | |v Terminal voltage of inductor | |volt | |i Current through the inductor | |current | | p instantaneous power dissipated by the inductor | | | -------------------------------------------------------------
------------------------------------------------------------ | mutual - instance parameters (input-output) | |-----------------------------------------------------------+ | k Mutual inductance | | coefficient (null) | | inductor1 First coupled inductor | | inductor2 Second coupled inductor | ------------------------------------------------------------
------------------------------------------------------------ | Isource - instance parameters (input-only) | |-----------------------------------------------------------+ | pulse Pulse description | | sine Sinusoidal source description | | sin Sinusoidal source description | | exp Exponential source description | ------------------------------------------------------------ | pwl Piecewise linear description | | sffm single freq. FM description | | ac AC magnitude,phase vector | | c Current through current source | | distof1 f1 input for distortion | | distof2 f2 input for distortion | ------------------------------------------------------------ ------------------------------------------------------------ | Isource - instance parameters (input-output) | |-----------------------------------------------------------+ | dc DC value of source | | acmag AC magnitude | | acphase AC phase | ------------------------------------------------------------ ------------------------------------------------------------ | Isource - instance parameters (output-only) | |-----------------------------------------------------------+ | neg_node Negative node of source | | pos_node Positive node of source | acreal AC real part | acimag AC imaginary part | ------------------------------------------------------------ | function Function of the source | | order Order of the source function | | coeffs Coefficients of the source | | v Voltage across the supply | | p Power supplied by the source | ------------------------------------------------------------
------------------------------------------------------------ | JFET - instance parameters (input-output) | |-----------------------------------------------------------+ | off Device initially off | | ic Initial VDS,VGS vector | | area Area factor | | ic-vds Initial D-S voltage | | ic-vgs Initial G-S volrage | | temp Instance temperature | ------------------------------------------------------------ --------------------------------------------------------------- | JFET - instance parameters (output-only) | |--------------------------------------------------------------+ |drain-node Number of drain node | |gate-node Number of gate node | |source-node Number of source node | |drain-prime-node Internal drain node | --------------------------------------------------------------- |source-prime-nodeInternal source node | |vgs Voltage G-S | |vgd Voltage G-D | |ig Current at gate node | |--------------------------------------------------------------+ |id Current at drain node | |is Source current | |igd Current G-D | |gm Transconductance | --------------------------------------------------------------- |gds Conductance D-S | |ggs Conductance G-S | |ggd Conductance G-D | |qgs Charge storage G-S junction | |--------------------------------------------------------------+ |qgd Charge storage G-D junction | cqgs Capacitance due to charge storage G-S junction | | cqgd Capacitance due to charge storage G-D junction |p Power dissipated by the JFET | --------------------------------------------------------------- ------------------------------------------------------------ | JFET - model parameters (input-output) | |-----------------------------------------------------------+ | njf N type JFET model | | pjf P type JFET model | | vt0 Threshold voltage | | vto (null) | ------------------------------------------------------------ | beta Transconductance parameter | | lambda Channel length modulation param. | | rd Drain ohmic resistance | | rs Source ohmic resistance | | cgs G-S junction capactance | | cgd G-D junction cap | | pb Gate junction potential | | is Gate junction saturation current | | fc Forward bias junction fit parm. | ------------------------------------------------------------ | b Doping tail parameter | | tnom parameter measurement temperature | | kf Flicker Noise Coefficient | | af Flicker Noise Exponent | ------------------------------------------------------------ ------------------------------------------------------------ | JFET - model parameters (output-only) | |-----------------------------------------------------------+ | type N-type or P-type JFET model | | gd Drain conductance | | gs Source conductance | ------------------------------------------------------------B15
------------------------------------------------------------ | LTRA - instance parameters (input-only) | |-----------------------------------------------------------+ | ic Initial condition vector:v1,i1,v2,i2 | ------------------------------------------------------------ ------------------------------------------------------------ | LTRA - instance parameters (input-output) | |-----------------------------------------------------------+ | v1 Initial voltage at end 1 | | v2 Initial voltage at end 2 | | i1 Initial current at end 1 | | i2 Initial current at end 2 | ------------------------------------------------------------ ------------------------------------------------------------ | LTRA - instance parameters (output-only) | |-----------------------------------------------------------+ | pos_node1 Positive node of end 1 of t-line | | neg_node1 Negative node of end 1 of t.line | | pos_node2 Positive node of end 2 of t-line | | neg_node2 Negative node of end 2 of t-line | ------------------------------------------------------------ ------------------------------------------------------------ | LTRA - model parameters (input-output) | |-----------------------------------------------------------+ |ltra LTRA model | |r Resistance per metre | |l Inductance per metre | |g (null) | ------------------------------------------------------------ |c Capacitance per metre | |len length of line | |nocontrol No timestep control | |steplimit always limit timestep to 0.8*(delay of line) | continued | ------------------------------------------------------------ ----------------------------------------------------------------------------------- | LTRA - model input-output parameters - continued | |----------------------------------------------------------------------------------+ |nosteplimit don't always limit timestep to 0.8*(delay of line) | |lininterp use linear interpolation | |quadinterp use quadratic interpolation | |mixedinterp use linear interpolation if quadratic results look unacceptable | ----------------------------------------------------------------------------------- |truncnr use N-R iterations for step calculation in LTRAtrunc | |truncdontcut don't limit timestep to keep impulse response calculation errors low |compactrel special reltol for straight line checking | |compactabs special abstol for straight line checking | ----------------------------------------------------------------------------------- ------------------------------------------------------------ | LTRA - model parameters (output-only) | |-----------------------------------------------------------+ | rel Rel. rate of change of deriv. for bkpt | | abs Abs. rate of change of deriv. for bkpt | ------------------------------------------------------------
------------------------------------------------------------ | MES - instance parameters (input-output) | |-----------------------------------------------------------+ | area Area factor | | icvds Initial D-S voltage | | icvgs Initial G-S voltage | ------------------------------------------------------------ ------------------------------------------------------------ | MES - instance parameters (output-only) | |-----------------------------------------------------------+ |off Device initially off | |dnode Number of drain node | |gnode Number of gate node | |snode Number of source node | ------------------------------------------------------------ |dprimenode Number of internal drain node | |sprimenode Number of internal source node | |vgs Gate-Source voltage | |vgd Gate-Drain voltage | |-----------------------------------------------------------+ |cg Gate capacitance | |cd Drain capacitance | |cgd Gate-Drain capacitance | |gm Transconductance | ------------------------------------------------------------ |gds Drain-Source conductance | |ggs Gate-Source conductance | |ggd Gate-Drain conductance | |cqgs Capacitance due to gate-source charge storage |-----------------------------------------------------------+ |cqgd Capacitance due to gate-drain charge storage| |qgs Gate-Source charge storage | |qgd Gate-Drain charge storage | |is Source current | | p Power dissipated by the mesfet | ------------------------------------------------------------ ------------------------------------------------------------ | MES - model parameters (input-only) | |-----------------------------------------------------------+ | nmf N type MESfet model | | pmf P type MESfet model | ------------------------------------------------------------ ------------------------------------------------------------ | MES - model parameters (input-output) | |-----------------------------------------------------------+ | vt0 Pinch-off voltage | | vto (null) | | alpha Saturation voltage parameter | | beta Transconductance parameter | ------------------------------------------------------------ | lambda Channel length modulation parm. | | b Doping tail extending parameter | | rd Drain ohmic resistance | | rs Source ohmic resistance | |-----------------------------------------------------------+ | cgs G-S junction capacitance | | cgd G-D junction capacitance | | pb Gate junction potential | | is Junction saturation current | ------------------------------------------------------------ | fc Forward bias junction fit parm. | | kf Flicker noise coefficient | | af Flicker noise exponent | ------------------------------------------------------------ ------------------------------------------------------------ | MES - model parameters (output-only) | |-----------------------------------------------------------+ | type N-type or P-type MESfet model | | gd Drain conductance | | gs Source conductance | | depl_cap Depletion capacitance | | vcrit Critical voltage | ------------------------------------------------------------B.17
------------------------------------------------------------ | Mos1 - instance parameters (input-only) | |-----------------------------------------------------------+ | off Device initially off | | ic Vector of D-S, G-S, B-S voltages | ------------------------------------------------------------ ------------------------------------------------------------ | Mos1 - instance parameters (input-output) | |-----------------------------------------------------------+ | l Length | | w Width | | ad Drain area | | as Source area | ------------------------------------------------------------ | pd Drain perimeter | | ps Source perimeter | | nrd Drain squares | | nrs Source squares | |-----------------------------------------------------------+ | icvds Initial D-S voltage | | icvgs Initial G-S voltage | | icvbs Initial B-S voltage | | temp Instance temperature | ------------------------------------------------------------ ------------------------------------------------------------ | Mos1 - instance parameters (output-only) | |-----------------------------------------------------------+ | id Drain current | | is Source current | | ig Gate current | | ib Bulk current | ------------------------------------------------------------ | ibd B-D junction current | | ibs B-S junction current | | vgs Gate-Source voltage | | vds Drain-Source voltage | |-----------------------------------------------------------+ | vbs Bulk-Source voltage | | vbd Bulk-Drain voltage | | dnode Number of the drain node | | gnode Number of the gate node | ------------------------------------------------------------ | snode Number of the source node | | bnode Number of the node | | dnodeprime Number of int. drain node | | snodeprime Number of int. source node | |-----------------------------------------------------------+ | von | | vdsat Saturation drain voltage | | sourcevcrit Critical source voltage | | drainvcrit Critical drain voltage | | rs Source resistance | |sourceconductance Conductance of source | |rd Drain conductance | |drainconductance Conductance of drain | |gm Transconductance | -------------------------------------------------------------- |gds Drain-Source conductance | |gmb Bulk-Source transconductance | |gmbs | |gbd Bulk-Drain conductance | |-------------------------------------------------------------+ |gbs Bulk-Source conductance | |cbd Bulk-Drain capacitance | |cbs Bulk-Source capacitance | |cgs Gate-Source capacitance | -------------------------------------------------------------- |cgd Gate-Drain capacitance | |cgb Gate-Bulk capacitance | |cqgs Capacitance due to gate-source charge storage |cqgd Capacitance due to gate-drain charge storage| |-------------------------------------------------------------+ |cqgb Capacitance due to gate-bulk charge storage | |cqbd Capacitance due to bulk-drain charge storage| cqbs Capacitance due to bulk-source charge storage |cbd0 Zero-Bias B-D junction capacitance | -------------------------------------------------------------- |cbdsw0 | |cbs0 Zero-Bias B-S junction capacitance | |cbssw0 | |qgs Gate-Source charge storage | |-------------------------------------------------------------+ |qgd Gate-Drain charge storage | |qgb Gate-Bulk charge storage | |qbd Bulk-Drain charge storage | |qbs Bulk-Source charge storage | |p Instaneous power | -------------------------------------------------------------- ------------------------------------------------------------ | Mos1 - model parameters (input-only) | |-----------------------------------------------------------+ | nmos N type MOSfet model | | pmos P type MOSfet model | ------------------------------------------------------------ ------------------------------------------------------------ | Mos1 - model parameters (input-output) | |-----------------------------------------------------------+ | vto Threshold voltage | | vt0 (null) | | kp Transconductance parameter | | gamma Bulk threshold parameter | ------------------------------------------------------------ | phi Surface potential | | lambda Channel length modulation | | rd Drain ohmic resistance | | rs Source ohmic resistance | | cbd B-D junction capacitance | | cbs B-S junction capacitance | | is Bulk junction sat. current | ------------------------------------------------------------ | pb Bulk junction potential | | cgso Gate-source overlap cap. | | cgdo Gate-drain overlap cap. | | cgbo Gate-bulk overlap cap. | |-----------------------------------------------------------+ | rsh Sheet resistance | | cj Bottom junction cap per area | | mj Bottom grading coefficient | | cjsw Side junction cap per area | ------------------------------------------------------------ | mjsw Side grading coefficient | | js Bulk jct. sat. current density | | tox Oxide thickness | | ld Lateral diffusion | |-----------------------------------------------------------+ | u0 Surface mobility | | uo (null) | | fc Forward bias jct. fit parm. | | nsub Substrate doping | ------------------------------------------------------------ | tpg Gate type | | nss Surface state density | | tnom Parameter measurement temperature | | kf Flicker noise coefficient | | af Flicker noise exponent | ------------------------------------------------------------ ------------------------------------------------------------ | Mos1 - model parameters (output-only) | |-----------------------------------------------------------+ | type N-channel or P-channel MOS | ------------------------------------------------------------
------------------------------------------------------------ | Mos2 - instance parameters (input-only) | |-----------------------------------------------------------+ | off Device initially off | | ic Vector of D-S, G-S, B-S voltages | ------------------------------------------------------------ ------------------------------------------------------------ | Mos2 - instance parameters (input-output) | |-----------------------------------------------------------+ | l Length | | w Width | | ad Drain area | | as Source area | ------------------------------------------------------------ | pd Drain perimeter | | ps Source perimeter | | nrd Drain squares | | nrs Source squares | |-----------------------------------------------------------+ | icvds Initial D-S voltage | | icvgs Initial G-S voltage | | icvbs Initial B-S voltage | | temp Instance operating temperature | ------------------------------------------------------------ ------------------------------------------------------------ | Mos2 - instance parameters (output-only) | |-----------------------------------------------------------+ | id Drain current | | cd | | ibd B-D junction current | | ibs B-S junction current | ------------------------------------------------------------ | is Source current | | ig Gate current | | ib Bulk current | | vgs Gate-Source voltage | |-----------------------------------------------------------+ | vds Drain-Source voltage | | vbs Bulk-Source voltage | | vbd Bulk-Drain voltage | | dnode Number of drain node | ------------------------------------------------------------ | gnode Number of gate node | | snode Number of source node | | bnode Number of bulk node | | dnodeprime Number of internal drain node | |-----------------------------------------------------------+ | snodeprime Number of internal source node | | von | | vdsat Saturation drain voltage | | sourcevcrit Critical source voltage | | drainvcrit Critical drain voltage | |rs Source resistance | |sourceconductanceSource conductance | |rd Drain resistance | |drainconductance Drain conductance | -------------------------------------------------------------- |gm Transconductance | |gds Drain-Source conductance | |gmb Bulk-Source transconductance | |gmbs | |-------------------------------------------------------------+ |gbd Bulk-Drain conductance | |gbs Bulk-Source conductance | |cbd Bulk-Drain capacitance | |cbs Bulk-Source capacitance | -------------------------------------------------------------- |cgs Gate-Source capacitance | |cgd Gate-Drain capacitance | |cgb Gate-Bulk capacitance | |cbd0 Zero-Bias B-D junction capacitance | |-------------------------------------------------------------+ |cbdsw0 | |cbs0 Zero-Bias B-S junction capacitance | |cbssw0 | |cqgs Capacitance due to gate-source charge storage | | | -------------------------------------------------------------- |cqgd Capacitance due to gate-drain charge storage| |cqgb Capacitance due to gate-bulk charge storage | |cqbd Capacitance due to bulk-drain charge storage| |cqbs Capacitance due to bulk-source charge storage |-------------------------------------------------------------+ |qgs Gate-Source charge storage | |qgd Gate-Drain charge storage | |qgb Gate-Bulk charge storage | |qbd Bulk-Drain charge storage | |qbs Bulk-Source charge storage | |p Instantaneous power | -------------------------------------------------------------- ------------------------------------------------------------ | Mos2 - model parameters (input-only) | |-----------------------------------------------------------+ | nmos N type MOSfet model | | pmos P type MOSfet model | ------------------------------------------------------------ ------------------------------------------------------------ | Mos2 - model parameters (input-output) | |-----------------------------------------------------------+ | vto Threshold voltage | | vt0 (null) | | kp Transconductance parameter | | gamma Bulk threshold parameter | ------------------------------------------------------------ | phi Surface potential | | lambda Channel length modulation | | rd Drain ohmic resistance | | rs Source ohmic resistance | |-----------------------------------------------------------+ | cbd B-D junction capacitance | | cbs B-S junction capacitance | | is Bulk junction sat. current | | pb Bulk junction potential | ------------------------------------------------------------ | cgso Gate-source overlap cap. | | cgdo Gate-drain overlap cap. | | cgbo Gate-bulk overlap cap. | | rsh Sheet resistance | |-----------------------------------------------------------+ | cj Bottom junction cap per area | | mj Bottom grading coefficient | | cjsw Side junction cap per area | | mjsw Side grading coefficient | ------------------------------------------------------------ | js Bulk jct. sat. current density | | tox Oxide thickness | | ld Lateral diffusion | | u0 Surface mobility | |-----------------------------------------------------------+ | uo (null) | | fc Forward bias jct. fit parm. | | nsub Substrate doping | | tpg Gate type | ------------------------------------------------------------ | nss Surface state density | | delta Width effect on threshold | | uexp Crit. field exp for mob. deg. | | ucrit Crit. field for mob. degradation | |-----------------------------------------------------------+ | vmax Maximum carrier drift velocity | | xj Junction depth | | neff Total channel charge coeff. | | nfs Fast surface state density | ------------------------------------------------------------ | tnom Parameter measurement temperature | | kf Flicker noise coefficient | | af Flicker noise exponent | ------------------------------------------------------------ ------------------------------------------------------------ | Mos2 - model parameters (output-only) | |-----------------------------------------------------------+ | type N-channel or P-channel MOS | ------------------------------------------------------------
------------------------------------------------------------ | Mos3 - instance parameters (input-only) | |-----------------------------------------------------------+ | off Device initially off | ------------------------------------------------------------ ------------------------------------------------------------ | Mos3 - instance parameters (input-output) | |-----------------------------------------------------------+ | l Length | | w Width | | ad Drain area | | as Source area | ------------------------------------------------------------ | pd Drain perimeter | | ps Source perimeter | | nrd Drain squares | | nrs Source squares | |-----------------------------------------------------------+ | icvds Initial D-S voltage | | icvgs Initial G-S voltage | | icvbs Initial B-S voltage | | ic Vector of D-S, G-S, B-S voltages | | temp Instance operating temperature | ------------------------------------------------------------ ------------------------------------------------------------ | Mos3 - instance parameters (output-only) | |-----------------------------------------------------------+ | id Drain current | | cd Drain current | | ibd B-D junction current | | ibs B-S junction current | ------------------------------------------------------------ | is Source current | | ig Gate current | | ib Bulk current | | vgs Gate-Source voltage | |-----------------------------------------------------------+ | vds Drain-Source voltage | | vbs Bulk-Source voltage | | vbd Bulk-Drain voltage | | dnode Number of drain node | ------------------------------------------------------------ | gnode Number of gate node | | snode Number of source node | | bnode Number of bulk node | | dnodeprime Number of internal drain node | | snodeprime Number of internal source node | | continued | ------------------------------------------------------------ -------------------------------------------------------------- | Mos3 - instance output-only parameters - continued |-------------------------------------------------------------+ |von Turn-on voltage | |vdsat Saturation drain voltage | |sourcevcrit Critical source voltage | |drainvcrit Critical drain voltage | -------------------------------------------------------------- |rs Source resistance | |sourceconductanceSource conductance | |rd Drain resistance | |drainconductance Drain conductance | |-------------------------------------------------------------+ |gm Transconductance | |gds Drain-Source conductance | |gmb Bulk-Source transconductance | |gmbs Bulk-Source transconductance | -------------------------------------------------------------- |gbd Bulk-Drain conductance | |gbs Bulk-Source conductance | |cbd Bulk-Drain capacitance | |cbs Bulk-Source capacitance | |-------------------------------------------------------------+ |cgs Gate-Source capacitance | |cgd Gate-Drain capacitance | |cgb Gate-Bulk capacitance | cqgs Capacitance due to gate-source charge storage | | -------------------------------------------------------------- |cqgd Capacitance due to gate-drain charge storage| |cqgb Capacitance due to gate-bulk charge storage | |cqbd Capacitance due to bulk-drain charge storage| |cqbs Capacitance due to bulk-source charge storage |-------------------------------------------------------------+ |cbd0 Zero-Bias B-D junction capacitance | |cbdsw0 Zero-Bias B-D sidewall capacitance | |cbs0 Zero-Bias B-S junction capacitance | |cbssw0 Zero-Bias B-S sidewall capacitance | -------------------------------------------------------------- |qbs Bulk-Source charge storage | |qgs Gate-Source charge storage | |qgd Gate-Drain charge storage | |qgb Gate-Bulk charge storage | |qbd Bulk-Drain charge storage | |p Instantaneous power | -------------------------------------------------------------- ------------------------------------------------------------ | Mos3 - model parameters (input-only) | |-----------------------------------------------------------+ | nmos N type MOSfet model | | pmos P type MOSfet model | ------------------------------------------------------------ ------------------------------------------------------------ | Mos3 - model parameters (input-output) | |-----------------------------------------------------------+ | vto Threshold voltage | | vt0 (null) | | kp Transconductance parameter | | gamma Bulk threshold parameter | ------------------------------------------------------------ | phi Surface potential | | rd Drain ohmic resistance | | rs Source ohmic resistance | | cbd B-D junction capacitance | |-----------------------------------------------------------+ | cbs B-S junction capacitance | | is Bulk junction sat. current | | pb Bulk junction potential | | cgso Gate-source overlap cap. | ------------------------------------------------------------ | cgdo Gate-drain overlap cap. | | cgbo Gate-bulk overlap cap. | | rsh Sheet resistance | | cj Bottom junction cap per area | |-----------------------------------------------------------+ | mj Bottom grading coefficient | | cjsw Side junction cap per area | | mjsw Side grading coefficient | | js Bulk jct. sat. current density | ------------------------------------------------------------ | tox Oxide thickness | | ld Lateral diffusion | | u0 Surface mobility | | uo (null) | |-----------------------------------------------------------+ | fc Forward bias jct. fit parm. | | nsub Substrate doping | | tpg Gate type | | nss Surface state density | ------------------------------------------------------------ | vmax Maximum carrier drift velocity | | xj Junction depth | | nfs Fast surface state density | | xd Depletion layer width | |-----------------------------------------------------------+ | alpha Alpha | | eta Vds dependence of threshold voltage | | delta Width effect on threshold | | input_delta (null) | ------------------------------------------------------------ | theta Vgs dependence on mobility | | kappa Kappa | | tnom Parameter measurement temperature | | kf Flicker noise coefficient | | af Flicker noise exponent | ------------------------------------------------------------ ------------------------------------------------------------ | Mos3 - model parameters (output-only) | |-----------------------------------------------------------+ | type N-channel or P-channel MOS | ------------------------------------------------------------
------------------------------------------------------------ | Mos6 - instance parameters (input-only) | |-----------------------------------------------------------+ | off Device initially off | | ic Vector of D-S, G-S, B-S voltages | ------------------------------------------------------------ ------------------------------------------------------------ | Mos6 - instance parameters (input-output) | |-----------------------------------------------------------+ | l Length | | w Width | | ad Drain area | | as Source area | ------------------------------------------------------------ | pd Drain perimeter | | ps Source perimeter | | nrd Drain squares | | nrs Source squares | |-----------------------------------------------------------+ | icvds Initial D-S voltage | | icvgs Initial G-S voltage | | icvbs Initial B-S voltage | | temp Instance temperature | ------------------------------------------------------------ ------------------------------------------------------------ | Mos6 - instance parameters (output-only) | |-----------------------------------------------------------+ | id Drain current | | cd Drain current | | is Source current | | ig Gate current | ------------------------------------------------------------ | ib Bulk current | | ibs B-S junction capacitance | | ibd B-D junction capacitance | | vgs Gate-Source voltage | |-----------------------------------------------------------+ | vds Drain-Source voltage | | vbs Bulk-Source voltage | | vbd Bulk-Drain voltage | | dnode Number of the drain node | ------------------------------------------------------------ | gnode Number of the gate node | | snode Number of the source node | | bnode Number of the node | | dnodeprime Number of int. drain node | | snodeprime Number of int. source node | |rs Source resistance | |sourceconductanceSource conductance | |rd Drain resistance | |drainconductance Drain conductance | -------------------------------------------------------------- |von Turn-on voltage | |vdsat Saturation drain voltage | |sourcevcrit Critical source voltage | |drainvcrit Critical drain voltage | |-------------------------------------------------------------+ |gmbs Bulk-Source transconductance | |gm Transconductance | |gds Drain-Source conductance | |gbd Bulk-Drain conductance | -------------------------------------------------------------- |gbs Bulk-Source conductance | |cgs Gate-Source capacitance | |cgd Gate-Drain capacitance | |cgb Gate-Bulk capacitance | |-------------------------------------------------------------+ |cbd Bulk-Drain capacitance | |cbs Bulk-Source capacitance | |cbd0 Zero-Bias B-D junction capacitance | |cbdsw0 | -------------------------------------------------------------- |cbs0 Zero-Bias B-S junction capacitance | |cbssw0 | |cqgs Capacitance due to gate-source charge storage |cqgd Capacitance due to gate-drain charge storage| |-------------------------------------------------------------+ |cqgb Capacitance due to gate-bulk charge storage | |cqbd Capacitance due to bulk-drain charge storage| cqbs Capacitance due to bulk-source charge storage |qgs Gate-Source charge storage | -------------------------------------------------------------- |qgd Gate-Drain charge storage | |qgb Gate-Bulk charge storage | |qbd Bulk-Drain charge storage | |qbs Bulk-Source charge storage | |p Instaneous power | -------------------------------------------------------------- ------------------------------------------------------------ | Mos6 - model parameters (input-only) | |-----------------------------------------------------------+ | nmos N type MOSfet model | | pmos P type MOSfet model | ------------------------------------------------------------ ------------------------------------------------------------ | Mos6 - model parameters (input-output) | |-----------------------------------------------------------+ | vto Threshold voltage | | vt0 (null) | | kv Saturation voltage factor | | nv Saturation voltage coeff. | ------------------------------------------------------------ | kc Saturation current factor | | nc Saturation current coeff. | | nvth Threshold voltage coeff. | | ps Sat. current modification par. | |-----------------------------------------------------------+ | gamma Bulk threshold parameter | | gamma1 Bulk threshold parameter 1 | | sigma Static feedback effect par. | | phi Surface potential | ------------------------------------------------------------ | lambda Channel length modulation param. | | lambda0 Channel length modulation param. 0 | | lambda1 Channel length modulation param. 1 | | rd Drain ohmic resistance | |-----------------------------------------------------------+ | rs Source ohmic resistance | | cbd B-D junction capacitance | | cbs B-S junction capacitance | | is Bulk junction sat. current | ------------------------------------------------------------ | pb Bulk junction potential | | cgso Gate-source overlap cap. | | cgdo Gate-drain overlap cap. | | cgbo Gate-bulk overlap cap. | |-----------------------------------------------------------+ | rsh Sheet resistance | | cj Bottom junction cap per area | | mj Bottom grading coefficient | | cjsw Side junction cap per area | ------------------------------------------------------------ | mjsw Side grading coefficient | | js Bulk jct. sat. current density | | ld Lateral diffusion | | tox Oxide thickness | |-----------------------------------------------------------+ | u0 Surface mobility | | uo (null) | | fc Forward bias jct. fit parm. | | tpg Gate type | ------------------------------------------------------------ | nsub Substrate doping | | nss Surface state density | | tnom Parameter measurement temperature | ------------------------------------------------------------ ------------------------------------------------------------ | Mos6 - model parameters (output-only) | |-----------------------------------------------------------+ | type N-channel or P-channel MOS | ------------------------------------------------------------B.12
------------------------------------------------------------ | Resistor - instance parameters (input-output) | |-----------------------------------------------------------+ | resistance Resistance | | temp Instance operating temperature | | l Length | | w Width | ------------------------------------------------------------
------------------------------------------------------------ | Resistor - instance parameters (output-only) | |-----------------------------------------------------------+ | i Current | | p Power | ------------------------------------------------------------
------------------------------------------------------------ | Resistor - model parameters (input-only) | |-----------------------------------------------------------+ | r Device is a resistor model | ------------------------------------------------------------
------------------------------------------------------------ | Resistor - model parameters (input-output) | |-----------------------------------------------------------+ | rsh Sheet resistance | | narrow Narrowing of resistor | | tc1 First order temp. coefficient | | tc2 Second order temp. coefficient | | defw Default device width | | tnom Parameter measurement temperature | ------------------------------------------------------------
B.22. Switch: Ideal voltage controlled switch ------------------------------------------------------------ | Switch - instance parameters (input-only) | |-----------------------------------------------------------+ | on Switch initially closed | | off Switch initially open | ------------------------------------------------------------
------------------------------------------------------------ | Switch - instance parameters (input-output) | |-----------------------------------------------------------+ | pos_node Positive node of switch | | neg_node Negative node of switch | ------------------------------------------------------------
------------------------------------------------------------ | Switch - instance parameters (output-only) | |-----------------------------------------------------------+ | cont_p_node Positive contr. node of switch | | cont_n_node Positive contr. node of switch | | i Switch current | | p Switch power | ------------------------------------------------------------
------------------------------------------------------------ | Switch - model parameters (input-output) | |-----------------------------------------------------------+ | sw Switch model | | vt Threshold voltage | | vh Hysteresis voltage | | ron Resistance when closed | | roff Resistance when open | ------------------------------------------------------------
------------------------------------------------------------ | Switch - model parameters (output-only) | |-----------------------------------------------------------+ | gon Conductance when closed | | goff Conductance when open | ------------------------------------------------------------
B.23. Tranline: Lossless transmission line ------------------------------------------------------------ | Tranline - instance parameters (input-only) | |-----------------------------------------------------------+ | ic Initial condition vector:v1,i1,v2,i2 | ------------------------------------------------------------
------------------------------------------------------------ | Tranline - instance parameters (input-output) | |-----------------------------------------------------------+ | z0 Characteristic impedance | | zo (null) | | f Frequency | | td Transmission delay | ------------------------------------------------------------ | nl Normalized length at frequency given | | v1 Initial voltage at end 1 | | v2 Initial voltage at end 2 | | i1 Initial current at end 1 | | i2 Initial current at end 2 | ------------------------------------------------------------
------------------------------------------------------------ | Tranline - instance parameters (output-only) | |-----------------------------------------------------------+ | rel Rel. rate of change of deriv. for bkpt | | abs Abs. rate of change of deriv. for bkpt | | pos_node1 Positive node of end 1 of t. line | | neg_node1 Negative node of end 1 of t. line | ------------------------------------------------------------ | pos_node2 Positive node of end 2 of t. line | | neg_node2 Negative node of end 2 of t. line | | delays Delayed values of excitation | ------------------------------------------------------------
B.24. VCCS: Voltage controlled current source ------------------------------------------------------------ | VCCS - instance parameters (input-only) | |-----------------------------------------------------------+ | ic Initial condition of controlling source | ------------------------------------------------------------
------------------------------------------------------------ | VCCS - instance parameters (input-output) | |-----------------------------------------------------------+ | gain Transconductance of source (gain) | ------------------------------------------------------------
------------------------------------------------------------ | VCCS - instance parameters (output-only) | |-----------------------------------------------------------+ | pos_node Positive node of source | | neg_node Negative node of source | | cont_p_node Positive node of contr. source | | cont_n_node Negative node of contr. source | ------------------------------------------------------------ | i Output current | | v Voltage across output | | p Power | ------------------------------------------------------------
B.25. VCVS: Voltage controlled voltage source ------------------------------------------------------------ | VCVS - instance parameters (input-only) | |-----------------------------------------------------------+ | ic Initial condition of controlling source | ------------------------------------------------------------
------------------------------------------------------------ | VCVS - instance parameters (input-output) | |-----------------------------------------------------------+ | gain Voltage gain | ------------------------------------------------------------
------------------------------------------------------------ | VCVS - instance parameters (output-only) | |-----------------------------------------------------------+ | pos_node Positive node of source | | neg_node Negative node of source | | cont_p_node Positive node of contr. source | cont_n_node Negative node of contr. source ------------------------------------------------------------ | i Output current | | v Output voltage | | p Power | ------------------------------------------------------------
B.26. Vsource: Independent voltage source ------------------------------------------------------------ | Vsource - instance parameters (input-only) | |-----------------------------------------------------------+ | pulse Pulse description | | sine Sinusoidal source description | | sin Sinusoidal source description | | exp Exponential source description | ------------------------------------------------------------ | pwl Piecewise linear description | | sffm Single freq. FM descripton | | ac AC magnitude, phase vector | | distof1 f1 input for distortion | | distof2 f2 input for distortion | ------------------------------------------------------------ ------------------------------------------------------------ | Vsource - instance parameters (input-output) | |-----------------------------------------------------------+ | dc D.C. source value | | acmag A.C. Magnitude | | acphase A.C. Phase | ------------------------------------------------------------ ------------------------------------------------------------ | Vsource - instance parameters (output-only) | |-----------------------------------------------------------+ | pos_node Positive node of source | | neg_node Negative node of source | | function Function of the source | | order Order of the source function | ------------------------------------------------------------ | coeffs Coefficients for the function | | acreal AC real part | | acimag AC imaginary part | | i Voltage source current | | p Instantaneous power | ------------------------------------------------------------